| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HSB88WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
| HSB88WS |
Schottky Barrier Diodes for Detection and Mixer
Silicon Schottky Barrier Diode for Balanced Mixer
|
HITACHI[Hitachi Semiconductor]
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| U1FWJ44M |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MA4E2513 MA4E2513-1289 MA4E2513L-1289 MA4E2513L-12 |
SURMOUNT Low Barrier Tee 301Footprint Silicon Schottky Diodes
SURMOUNT Low Barrier Tee ??301??Footprint Silicon Schottky Diodes
|
|
